2005. 12. 27 1/7 semiconductor technical data khb7d5n60p1/f1 n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for active power factor correction and switching mode power supplies. features v dss =600v, i d =7.5a drain-source on resistance : r ds(on) =1.2 @v gs =10v qg(typ.)= 32.5nc maximum rating (tc=25 ) dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 12 3 khb7d5n60p1 * : drain current limited by maximum junction temperature. g d s characteristic symbol rating unit khb7d5n60p1 khb7D5N60F1 drain-source voltage v dss 600 v gate-source voltage v gss 30 v drain current @t c =25 i d 7.5 7.5* a @t c =100 4.6 4.6* pulsed (note1) i dp 30 30* single pulsed avalanche energy (note 2) e as 230 mj repetitive avalanche energy (note 1) e ar 14.7 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 p d 147 48 w derate above 25 1.18 0.38 w/ maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal characteristics thermal resistance, junction-to-case r thjc 0.85 2.6 /w thermal resistance, case-to-sink r thcs 0.5 - /w thermal resistance, junction-to-ambient r thja 62.5 62.5 /w dim millimeters to-220is a a b b c c d d e e f f g g h h 1.47 max 13.0 max j j k k l l m mm n n o o p q q 123 1. gate 2. drain 3. source 3.18 0.1 + _ 0.8 0.1 + _ 3.3 0.1 + _ 0.5 0.1 + _ 10.16 0.2 + _ 15.87 0.2 + _ 12.57 0.2 + _ 2.54 0.2 + _ 2.54 0.2 + _ 2.76 0.2 + _ 6.68 0.2 + _ 4.7 0.2 + _ 3.23 0.1 + _ 6.5 p khb7D5N60F1 free datasheet http://www.datasheet-pdf.com/
2005. 12. 27 2/7 khb7d5n60p1/f1 revision no : 0 electrical characteristics (tc=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.7 - v/ drain cut-off current i dss v ds =600v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = 30v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =10v, i d =3.75a - 1.0 1.2 dynamic total gate charge q g v ds =480v, i d =7.5a v gs =10v (note4,5) - 32.5 43 nc gate-source charge q gs - 5.5 7.2 gate-drain charge q gd - 13.2 14.2 turn-on delay time t d(on) v dd =300v r l =40 r g =25 (note4,5) - - 45 ns turn-on rise time t r - - 130 turn-off delay time t d(off) - - 220 turn-off fall time t f - - 140 input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1363 1550 pf output capacitance c oss - 121.8 140 reverse transfer capacitance c rss - 17 21 source-drain diode ratings continuous source current i s v gs 2005. 12. 27 3/7 khb7d5n60p1/f1 revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 -1 10 0 10 1 10 -1 10 0 10 1 10 0 10 -1 10 1 68 410 2 i d - v gs bv dss - t j r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 reverse drain current i s (a) 0 0.5 2.5 1.5 1.0 2.0 010 51525 20 junction temperature tj ( ) c source - drain voltage v sd (v) 2 5 c 15 0 c v g = 10v v g = 20v 10 0 10 -1 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5v r ds(on) - t j junction temperture t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 3.75a v gs = 0v i ds = 250 150 c 25 c -55 c free datasheet http://www.datasheet-pdf.com/
2005. 12. 27 4/7 khb7d5n60p1/f1 revision no : 0 drain current i d (a) gate - charge q g (nc) c - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 12 10 6 2 4 8 10 30 25 5 20 15 0 q g - v gs safe operation area capacitance (pf) gate - source voltage v gs (v) 0 800 1600 2000 2400 1200 400 10 -1 10 0 10 1 10 1 10 1 10 -1 10 0 10 0 10 2 10 2 10 2 10 3 frequency = 1mhz dc 10 s 10ms 1ms 100 s 100ms drain current i d (a) drain - source voltage v ds (v) safe operation area 10 1 10 1 10 -1 10 0 10 0 10 2 10 -2 10 2 10 3 dc 10 s 10 ms 1ms 100 ms 0 6 2 4 8 75 150 125 50 100 25 drain current i d (a) (khb7d5n60p1) (khb7D5N60F1) t c = 25 t j = 150 single nonrepetitive pulse c c i d =7.5a t c = 25 t j = 150 single nonrepetitive pulse c c operation in this area is limited by r ds(on) c junction temperature t j ( ) i d - t j operation in this area is limited by r ds(on) v ds = 120v v ds = 300v v ds = 480v 100 s c oss c iss c rss free datasheet http://www.datasheet-pdf.com/
2005. 12. 27 5/7 khb7d5n60p1/f1 revision no : 0 square wave pulse duration (sec) r th 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 {khb7d5n60p} square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 {khb7d5n60f} normalized transient thermal resistance r th normalized transient thermal resistance - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm single pulse dut y=0 .5 0.02 0.05 0.1 0.2 0.01 duty=0.5 0.02 0.05 0.1 0. 2 0.01 single pulse free datasheet http://www.datasheet-pdf.com/
2005. 12. 27 6/7 khb7d5n60p1/f1 revision no : 0 - gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p - resistive load switching - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss free datasheet http://www.datasheet-pdf.com/
2005. 12. 27 7/7 khb7d5n60p1/f1 revision no : 0 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.8 v dss free datasheet http://www.datasheet-pdf.com/
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